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H. Hein, M. Förtsch, H. Zimmermann:
"Low-power 300 Mbit/s OEIC with large-area photodiode";
Electronics Letters, vol. 41 (2005), S. 436 - 438.

The sensor realised in a low-cost 0.6 μm BiCMOS process includes a 400 μm-diameter photodiode. By parallelising the input transistor a minimum average optical input power of -24.7 dBm at a data rate of 300 Mbit/s is achieved. The power consumption of the transimpedance amplifier is less than 6 mW.

http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05935357