Talks and Poster Presentations (with Proceedings-Entry):
R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Tokyo, Japan;
2005-09-01
- 2005-09-03; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2005),
ISBN: 4-9902762-0-5;
191
- 194.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2005.201505
Online library catalogue of the TU Vienna:
http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05935507
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2006/CP2005_Wittmann_1.pdf
Created from the Publication Database of the Vienna University of Technology.