[Back]

A. Nemecek, K. Oberhauser, G. Zach, H. Zimmermann:
"Fast and efficient integrated silicon PIN-finger photodetector from ultraviolet up to near infrared";
Poster: International Conference on Group IV Photonics, Antwerpen, Belgium; 2005-09-21 - 2005-09-23; in: "2nd International Conference on Group IV Photonics", 05EX1053C (2005), ISBN: 0-7803-9071-7; Paper ID P20, 3 pages.

Results of an integrated silicon PIN-photodetector with structured anode fingers are presented. As an improvement to homogenous photodiodes, a structured detector for the visible range with anode fingers is shown. A PIN-design was realized to speed up the detector, avoiding slow carrier diffusion: the p⁺ doped finger-anode is arranged in a thick n^- low doped intrinsic region placed inside an n⁺ doped region. Due to this setup and a thick intrinsic region, a responsivity of R=0.25A/W (0.43A/W) at a wavelength of 410nm (660nm) could be reached. The achieved bandwith of the detector in the visible range is up to 3GHz. The photodiode was realized in a modified 0.5μm BiCMOS process.

http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05935522