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K. Edelmoser, H. Ertl, F. Zach:
"The Improved (optimized) Power Switch";
WSEAS Transactions on Circuits and Systems, 4 (2005), 6; S. 642 - 646.

Modern power electronic equipment (inverters, converters, switching mode amplifiers, etc.) mostly
are based on switching technique realized by MOSFETs or IGBTs. The requirement of higher output signal
quality, reduced size and weight as well as improved power density forces the design engineer to increase the
switching frequency into the range of up to several hundred kilohertz, which only can be realized using
optimized MOSFET topologies. Nevertheless, all these solutions deal with the disadvantage of the `weak´ body
diode of these components. To overcome this drawback, several solutions have been presented in the past. In
this paper a novel method is presented which helps to avoid the known disadvantages of the body diode
(reverse recovery current, recovery time). The application of an external switching diode (e.g. based on SiCtechnology)
permits switching frequency increased by a factor of more than two without additional losses.

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