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Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):

G. Hanreich, S. Bychikhin, D. Pogany, M. Marso, P. Kordos, J. Nicolics:
"Thermal Simulation and Charakterization of AlGaN/GaN/Si High Electron Mobility Transistors";
Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "ISSE 2005 - 28th International Spring Seminar on Electronics Technology", Österreichischer Verband für Elektrotechnik, Wien, ÖVE Schriftenreihe Nr. 39 (2005), ISBN: 3-85133036-6; S. 106 - 107.



Kurzfassung englisch:
We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.


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Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.