Talks and Poster Presentations (with Proceedings-Entry):
G. Meinhardt, J. Kraft, B. Löffler, H. Enichlmair, G. Röhrer, E. Wachmann, M. Schrems, R. Swoboda, C. Seidl, H. Zimmermann:
"High-speed blue-, red-, and infrared-sensitive photodiode integrated in a 0.35 µm SiGe:C-BiCMOS process";
Talk: IEEE International Electron Devices Meeting (IEDM),
Washington, DC, USA;
2005-12-05
- 2005-12-07; in: "iedm Technical Digest",
05CH37703
(2005),
ISBN: 0-7803-9268-x;
33.4.1
- 33.4,4.
English abstract:
A monolithically integrated photodiode with SiGe:C anode which exhibits an excellent spectral responsivity of typically 0.21/0.42/0.53 A/w at 410/660/785nm and sub-ns rise/fall times, fabricated without process modification is presented. the bandwidth of the photodiode exceeds 1300/490/260MHz at 410/660/785nm favoring this device for universal optical storage application. By applying a reverse bias voltage up to 10 V the photodiode features responsivities up to 0.6 A/W for 410nm due to avalanche multiplication.
Online library catalogue of the TU Vienna:
http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05935974
Created from the Publication Database of the Vienna University of Technology.