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K. Edelmoser, H. Ertl, F. Zach:
"Improved (optimized) Power Switch";
Vortrag: International Conference on Power Electronics and Intelligent Motion (PCIM), Nürnberg, Germany; 29.05.2006 - 01.06.2006; in: "Proceddings of the International Conference Power Electronics Intelligent Motion Power Quality", (2006), ISBN: 3-928643-43-6; S. 651 - 656.

Electronic equipment, based on switching mode technique (inverters, converters,
amplifiers, etc.) mostly is realized by MOSFETs or IGBTs. The market requirements of reduced
size, increased efficiency and power density forces the design engineer to increase the switching
frequency into the range of up to several hundred kilohertz, which only can be realized using
optimized circuit topologies based on optimized MOSFETS. Nevertheless, all these solutions deal
with the disadvantage of the 'weak' body diode of these components. To overcome this drawback,
several solutions have been presented in the past. In this paper, a novel method is presented
which helps to avoid the known disadvantages of the body diode (reverse recovery current, recovery
time). The application of an external switching diode (e.g., based on SiC-technology) permits a
switching frequency increase of a remarkable amount without excessive additional losses.

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