Talks and Poster Presentations (with Proceedings-Entry):
R. Quay, J. Würfl, D. Wiegner, G. Fischer, Ch. Schuberth, G. Magerl:
"GaN/AlGaN HEMTs for Highly Linear Communication Applications in L-Frequency band";
Talk: GigaHertz,
Uppsala, Sweden;
11-08-2005
- 11-09-2005; in: "GigaHertz 2005",
(2005),
4 pages.
English abstract:
This work summarizes recent achievements for the use of GaN/AlGaN HEMTs on s.i. SiC substrated for highly linear 3G/4G base station communication applications. CW fundamental loadpull, harmonic loadpull, and ACLR measurements are performed for both device and circuits up to 2.7 GHz to demonstrate the enormous bandwidth and linearity potential of the GaN/AlGaN devices.
Online library catalogue of the TU Vienna:
http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05935984
Created from the Publication Database of the Vienna University of Technology.