Talks and Poster Presentations (with Proceedings-Entry):
M. Pourfath, H. Kosina, S. Selberherr:
"A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters";
Talk: IEEE International Electron Devices Meeting (IEDM),
San Francisco, CA, USA;
2006-12-11
- 2006-12-13; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2006),
ISBN: 1-4244-0438-x;
819
- 822.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM.2006.346739
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2007/CP2006_Pourfath_5.pdf
Created from the Publication Database of the Vienna University of Technology.