Talks and Poster Presentations (with Proceedings-Entry):
W. Gös, T. Grasser:
"First-Principles Investigation on Oxide Trapping";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Vienna, Austria;
2007-09-25
- 2007-09-27; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
T. Grasser, S. Selberherr (ed.);
Springer-Verlag Wien New York,
12
(2007),
ISBN: 978-3-211-72860-4;
157
- 160.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1007/978-3-211-72861-1_38
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2008/CP2007_Goes_1.pdf
Created from the Publication Database of the Vienna University of Technology.