Talks and Poster Presentations (with Proceedings-Entry):

S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, A.L. Scholtz:
"An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio, Texas, USA; 11-12-2006 - 11-15-2006; in: "CSICS 2006 Proceedings", (2006), ISBN: 1-4244-0127-5; 21 - 24.

English abstract:
This paper reports on the design, fabrication and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The amplifier consumes a power of 990 mW at a supply of -5.5 V.

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.