Talks and Poster Presentations (with Proceedings-Entry):

S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, A.L. Scholtz:
"A Fundamental VCO with Integrated Output Buffer beyond 120 GHz in SiGe Bipolar Technology";
Talk: IEEE MTT-S International Microwave Symposium, Honolulu, Hawaii; 06-03-2007 - 06-08-2007; in: "2007 IEEE MTT-S International Microwave Symposium Digest", (2007), ISBN: 1-4244-0688-9; 645 - 648.

English abstract:
A fundamental voltage controlled oscillator (VCO) beyond 120 GHz is presented. The VCO has been extended by a cascode amplifier as an output buffer. The chip is fabricated in a 200 GHz fT SiGe bipolar technology. The VCO shows a tuning range from 117.5 to 121.5 GHz. A phase noise of -93.3 dBc/Hz at
1 MHz offset frequency was measured. The circuit consumes 310 mA from a -6 V supply. The high oscillation frequency with low phase noise performance, to the best authors´ knowledge, are record values for fully integrated fundamental voltage controlled oscillators in SiGe technology.

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.