Talks and Poster Presentations (with Proceedings-Entry):
B. Sogl, W. Bakalski, M. Zannoth, M. Asam, B. Kapfelsperger, J. Berkner, B. Eisener, W. Österreicher, E. Rampf, A.L. Scholtz, B. Klepser:
"A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm/ 32.3 dBm Output Power at 56%/ 44% PAE in Low/High-Band";
Talk: IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007 (BCTM 2007),
Boston, Massachusetts, USA;
- 10-02-2007; in: "Proceedings of the 2007 Bipolar/BiCMOS Circuits and Technology Meeting",
A standard-compliant integrated quadband GSM/EDGE radio frequency power amplifier for 824−915 MHz and 1710−1910 MHz has been realized in a 0.35μm-SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a biascontrol circuit for power control, band select and mode dependent quiescent currents. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak PAE is 56% for low-band and 44% for high-band.
Electronic version of the publication:
Created from the Publication Database of the Vienna University of Technology.