[Zurück]

A. Marchlewski, K. Schneider-Hornstein, H. Zimmermann:
"Improvement of photodiodes in 0.35μm BiCMOS technology";
E&I Elektrotechnik und Informationstechnik, vol. 125 (2008), S. 51 - 55.

An improvement of monolithically integrated photodiodes in a p-type substrate of a commercial high-speed 0.35Μm SiGe heterojunction transistor (HBT) BiCMOS technology, with a supply voltage of 5 V, is presented. The detectors combine low capacitance with high bandwidth and responsivity witch are realized with only slight process modifications with negligible influence on the transistor parameters. We achieve a speed improvement wich results, e.g., in a bandwidth of 475 MHz and a responsivity of 0.17 A/W at significant optical carrier wavelengths from near-infrared to blue and ultraviolet.