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A. Jüngel:
"Mixed finite-element approximation of the 2D/3D energy-transport model for semiconductors";
Talk: Institut für Mathematik der Universität Graz, Graz; 2007-10-30.

Thermal effects are becoming of increasing importance in semiconductor
devices, due to decreasing device lengths and increasing power
densities. These effects can be modeled efficiently by the
energy-transport equations for semiconductors. They consist of an
elliptic cross-diffusion system for the particle density and the
electron temperature, coupled to the Poisson equation for the
electrostatic potential. The model can be derived from the
semiconductor Boltzmann equation by the so-called moment method.
In this talk we present a mixed finite-element scheme in two and
three space dimensions and numerical simulations of field-effect
transistors. Furthermore, extensions of this model for the
coupling to electric networks are discussed.

Siehe englisches Abstract.

Energy-transport model, semiconductor devices, mixed finite elements