Contributions to Books:

S. Gadau, A. Jüngel:
"A 3D mixed finite-element approximation of the semiconductor energy-transport equations";
in: "ASC Report 22/2007", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2007, ISBN: 978-3-902627-00-1.

English abstract:
The stationary energy-transport equations for semiconductors in three space dimensions
are numerically discretized. The physical variables are the electron density, the energy density,
and the electric potential. Physically motivated mixed Dirichlet-Neumann boundary conditions are
employed. The numerical approximation is based on an hybridized mixed finite-element method
using Raviart-Thomas elements, applied to the dual-entropy formulation of the energy-transport
model. For the solution of the nonlinear discrete system, a Newton scheme with adaptive potential
stepping and two decoupling Gummel-type strategies with reduced rank extrapolation are proposed.
Multi-gate field-effect transistors in 2D and 3D are numerically simulated

Energy-transport equations, dual entropy variables, cross-diffusion system, mixed

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.