M. Brunk, A. Jüngel:

"Numerical coupling of electric circuit equations and energy-transport models for semiconductors";

SIAM Journal on Scientific Computing,30(2008), 2; S. 873 - 894.

Siehe englisches Abstract.

A coupled semiconductor-circuit model including thermal effects is proposed. The

charged particle flow in the semiconductor devices is described by the energy-transport equations

for the electrons and the drift-diffusion equations for the holes. The electric circuit is modeled by

the network equations from modified nodal analysis. The coupling is realized by the node potentials

providing the voltages applied to the semiconductor devices and the output device currents for

the network model. The resulting partial differential-algebraic system is discretized in time by the

2-stage backward difference formula and in space by a mixed-hybrid finite-element method using

Marini-Pietra elements. A static condensation procedure is applied to the coupled system reducing

the number of unknowns. Numerical simulations of a one-dimensional pn-junction diode with timedependent

voltage and of a rectifier circuit show the heating of the electrons which allows one to

identify hot spots in the devices. Moreover, the choice of the boundary conditions for the electron

density and energy density is numerically discussed.

Energy-transport equations, mixed finite elements, circuit equations

Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.