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A. Jüngel:
"Higher-order diffusive moment models from the semiconductor Boltzmann equation";
Hauptvortrag: Workshop on Kinetic Equations: Direct and Inverse Problems, Mantova, Italien; 14.05.2008 - 17.05.2008.

Siehe englisches Abstract.

A hierarchy of diffusive partial differential equations is derived by
a moment method and a Chapman-Enskog expansion from the semiconductor
Boltzmann equation in the diffusive regime. The moment equations are
closed by employing the entropy maximization principle of Levermore.
The new hierarchy contains the well-known drift-diffusion model, the
energy-transport equations, and the six-moments model of Grasser et al.,
which seems to improve previous simulations of deep-submicron devices.
The diffusive models are of parabolic type. Particular features of the
new model hierarchy are (1) a drift-diffusion formulation, allowing for
a numerical decoupling, and (2) a symmetric formulation in generalized
dual-entropy variables, inspired by nonequilibrium thermodynamics. An
entropy inequality (or H-theorem) follows from the latter formulation.

Semiconductor, Boltzmann equation