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G. Koblmüller, R. Averbeck, L. Geelhaar, H. Riechert, W. Hösler, P. Pongratz:
"Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy";
Journal of Applied Physics, 93 (2003), 9591 - 9596.

A growth diagram for molecular beam epitaxy of AlN on sapphire and 6H?SiC was established using reflection high energy electron diffraction, atomic force microscopy, and Rutherford backscattering spectrometry. In varying the Al/N ratio and growth temperature, distinctive surface morphologies emerge, which are assigned to three regimes of growth, one N-rich (Al/N<1) and two Al-rich (Al/N>1) regimes. Under N-rich conditions, AlN films exhibit rough surface morphologies. In contrast, Al-rich conditions produce excellent smooth surface morphologies, but with the constraint of Al droplet formation at very high Al/N ratios and low temperatures. The differentiation between N-rich and Al-rich regimes is given only by the Al/N ratio, while the two Al-rich regimes (intermediate self-regulated and droplet regime) are separated by the boundary line of Al droplet formation. For this boundary an Arrhenius dependence of growth temperature was found, yielding an activation energy of 3.4±0.1 eV. The observed morphology transitions are attributed to varying surface adatom mobilities present under the different Al/N ratios. ©2003 American Institute of Physics.

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