Zeitschriftenartikel:
S. Gabáni, E. Bauer, M. Della Mea, K. Flachbart, Y. Paderno, V. Pavlik, N. Shitsevalova:
"Insulator-metal phase transition in SmB6 under pressure";
Journal of Magnetism and Magnetic Materials,
272-276
(2004),
S. 397
- 399.
Kurzfassung englisch:
Insulator-metal phase transition in SmB6 under pressure
S. GabániCorresponding Author Contact Information, E-mail The Corresponding Author, a, E. Bauerb, M. Della Meab, K. Flachbarta, Y. Padernoc, V. Pavlíka and N. Shitsevalovac
a Centre of Low Temperature Physics, Institute of Experimental Physics, Slovak Academy of Sciences, Sk-04353, KoImageice, Slovakia
b Institut für Festkörperphysik, Technische Universität Wien, A-1040, Wien, Austria
c Institute for Problems of Materials Science, UA-252680, Kiev, Ukraine
Available online 17 January 2004.
Abstract
We present a study of the electrical resistivity of the intermediate valence narrow-gap semiconductor SmB6 at temperatures between 1.6 and 80 K and under pressure up to 70 kbar. We observe a pressure induced transition from a non-magnetic heavy fermion insulator to a metallic heavy fermion liquid at "quantum" critical point pcr≈40 kbar. In the insulating phase a continuous suppression of the gap under pressure was derived. Slightly above pcr a non-Fermi-liquid region was observed.
Author Keywords: SmB6; Insulator-metal transition; Quantum critical point; High pressure
71.28.+d; 71.30.+h; 75.30.Mb
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http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC04970235
Elektronische Version der Publikation:
doi:10.1016/j.jmmm.2003.11.118
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.