K. Olejnik, J. Zemek, W.S.M. Werner:

"Angular-resolved photoelectron spectroscopyof corrugated surfaces";

Surface Science,595(2005), 212 - 222.

The influence of surface roughness on angle-resolved photoelectron intensities has been studied by means of a semiempirical

method and experimentally. The full three-dimensional information about the surface roughness of real samples

measured by atomic force microscopy (AFM) was used as an input for the calculations of the so-called tilt-angle

histograms. Both effects of surface roughness, shadowing of photoelectrons and differences between microscopic and

macroscopic signal electron emission geometry (true emission angles), are taken into account. Photoelectron current

is then calculated using a common formalism XPS/AES valid for ideally flat surfaces, i.e. analytically by the

straight-line approximation (SLA) or by Monte Carlo calculations. The approach which can be applied for an arbitrary

type of surface roughness is verified on angular-resolved Si 2p photoelectron spectra recorded from model silicon samples

with different artificially modified surface roughness, covered by a thin silicon oxide film and a surface contamination.

The effect of surface roughness on the Si 2p photoelectron intensities was found to be quite prevalent over electron

elastic scattering or surface contamination effects. The so-called magic angle depended on a character of surface

roughness.

2005 Elsevier B.V. All rights reserved.

Keywords: X-ray photoelectron spectroscopy (XPS); Surface roughness; Tilt-angle histogram method; Electron elastic scattering;

Surface contamination; Magic angle

http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05938064

Created from the Publication Database of the Vienna University of Technology.