[Zurück]

C. Eisenmenger-Sittner, B. Schwarz, C. Tomastik, P.B. Barna, A. Kovács:
"Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al)";
Poster: International Conference on Thin Films 13, ICTF-13, Stockholm/ Schweden; 19.06.2005 - 23.06.2005.

Under Ultra High Vacuum (UHV) conditions Tin (Sn) forms a monoatomic wetting layer on Aluminium (Al) surfaces if Sn-islands formed by a preceding deposition process are present. Previous experimental observations and Kinetic Monte Carlo (KMC) simulations suggest that wetting layer formation is governed by thermally activated surface diffusion and adsorption processes.
In this paper a systematic study of interface wetting of Al by Sn will be performed on sandwich systems consisting of a 400 nm Al-base layer, a 10 nm Sn interlayer and a 400 nm thick Al capping layer. The morphology and chemical composition of the sandwich systems is investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The wetting process is studied by scanning Auger Electron Spectroscopy (AES) under UHV conditions. Depositing the Al-capping layer at different deposition rates allows for the assessment of the influence of the grain boundary density on the velocity of Sn-transport through the Al-capping layer. Studying the permeation speed of Sn through the capping layer at different temperatures shows that Sn penetrates the capping layer much more rapidly at elevated temperatures thus corroborating the involvement of thermally activated mechanisms in the transport process.
This work is supported by the Austrian Science Fund (FWF) under grant Nr. P-15739. The financial support of the Hungarian National Science Foundation under contract No. OTKA T033075 is acknowledged.