Publications in Scientific Journals:
G. Koblmüller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, J. Speck:
"Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy";
Japanese Journal of Applied Physics,
Vol. 44
(2005),
No. 28;
L906
- L908.
English abstract:
The impact of the Ga adlayer coverage onto the surface morphologies and pit densities of GaN (0001) films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been studied using quantitative in situ quadrupole mass spectrometry (QMS). As the equilibrium Ga adlayer coverages rise continuously from 0 to 2.5 monolayers (ML) the surface pit densities decrease from ∼2× 109 cm-2 to zero, yielding characteristic step-flow and spiral growth hillock features. These results show that there is a direct and quantitative link between Ga adlayer coverage, adatom diffusion and surface defect structure without any discontinuities.
Online library catalogue of the TU Vienna:
http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05938139
Electronic version of the publication:
http://jjap.ipap.jp/link?JJAP/44/L906/
Created from the Publication Database of the Vienna University of Technology.