[Zurück]

A.M. Strydom, Z. Guo, S. Paschen, R. Viennois, F. Steglich:
"Electronic properties of semiconducting CeRu₄Sn₆";
Physica B: Condensed Matter, 359-361 (2005), S. 293 - 295.

Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05938174

http://dx.doi.org/10.1016/j.physb.2005.01.111