[Zurück]

I. Gebeshuber, R.A.P. Smith, S. Pleschko, C. Grünberger, K. Kaska, M Fürsatz, Hp. Winter, F. Aumayr:
"Nanostructuring surfaces with slow multiply-charged ions";
Vortrag: IEEE, Singapur; 13.01.2006; in: "Proc. 2006 IEEE Conf. on Emerging Technologies - Nanoelectronics", p. 324 - 327 (2006), ISBN: 0-7803-9358-9; 4 S.

With the shrinking of semiconductor devices surface
features and structuring become increasingly important.
Generally, fast ions are used for modification of surfaces via ion
beam writing. Their kinetic energy is not only dissipated close to
the surface but also in deeper layers of the material. Associated
radiation damage could become a problem in the production of
novel 3D micro- and nanoelectromechanical systems (MEMS and
NEMS). Slow (<1keV) multiply-charged ions as opposed to fast
ions are a new tool for gentler structuring of surfaces at the
nanometer-scale. The substrate is modified only at and slightly
below the surface, opening the possibility of controlling electronic
properties at the nanometer scale, vertically and horizontally.
Materials under investigation are highly orientated pyrolytic
graphite, single crystal insulators (quartz, mica, aluminum oxide),
hydrogen-terminated single-crystal silicon, AsSe- and Se-glass and
mylar foils. The materials modified by the ion irradiation are
investigated with scanning probe microscopy (AFM, STM) in
ultrahigh vacuum and in ambient conditions.

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