[Zurück]

I. Gebeshuber, R.A.P. Smith, A.S. El-Said, K. Kaska, S. Pleschko, C. Grünberger, Hp. Winter, F. Aumayr:
"UHV and ambient AFM investigations of silicon surfaces nanostructured with singly- and multiply-charged ions";
Vortrag: Annual Linz Winter Workshop "Advances in single-molecule research for biology & nanoscience, Linz/OÖ; 06.02.2006; in: "Proc. of the VIII. Linz Winter Workshop "Advances in Single Molecule Research for Biology and Nanoscience"", Trauner Verlag Universität, Schriftenreihe Biophysik, Band 1, Editors: P. Hinterdorfer, G. Schuetz and P. Pohl, Linz, 2006 (2006), ISBN 3-85499-163-0, ISBN 978-3-85499-163-2, p. 117; S. 117 - 122.

Surface features and nanostructuring become increasingly important with the shrinking size of devices used by the semiconductor industry. We use the AFM, in ultrahigh vacuum as well as in ambient conditions, to investigate nanostructures generated by ion bombardment on flat surfaces.
Generally, fast ions are used for modification of surfaces via ion beam writing. Their kinetic energy is not only dissipated close to the surface but also in deeper layers of the material. Especially in the production of novel 3D micro- and nanoelectromechanical systems (MEMS and NEMS) radiation damage associated with such fast ions could become a problem.
Slow (<1keV) multiply-charged ions are a new tool for gentler structuring of surfaces on the nanometer-scale. The substrate is modified only at and slightly below the surface, opening the possibility of controlling material properties on the nanometer scale, both vertically and horizontally.
Recent results of AFM investigations on highly orientated pyrolytic graphite, single crystalline insulators, hydrogen-terminated single-crystal silicon, AsSe- and Se-glass, and mylar foils will be presented.

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