Publications in Scientific Journals:

V.H. Tran, E. Bauer:
"Specific heat and electronic transport properties of medium heavy-fermion compound U2Rh2In";
Journal of Physics: Condensed Matter, 18 (2006), 4677 - 4684.

English abstract:
Specific heat and electronic transport properties of medium heavy-fermion compound U2Rh2In

V H Tran et al 2006 J. Phys.: Condens. Matter 18 4677-4684 doi:10.1088/0953-8984/18/19/019

V H Tran 1 and E Bauer 2

1 W Trzebiatowski Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PO Box 1410, PL-50-950 Wroclaw, Poland
2 Institute of Solid State Physics, Vienna University of Technology, A-1040 Wien, Austria

We report on measurements of the temperature dependent specific heat, resistivity, Seebeck and Hall coefficients of U2Rh2In. This compound does not order magnetically down to 1.5 K and is characterized by an enhanced electronic-heat coefficient γ ~ 130 mJ/mol U K2 at 2 K. The magnetic resistivity shows a T 3/2 law below 4 K and a broad maximum at T ρmax = 55 K. The latter refers to the onset of coherence between U ions. The application of pressures up to 19 kbar diminishes the contribution of the spin fluctuation to the resistivity, but does not significantly change the position of the resistivity maximum. Thermopower is characterized by a deep minimum of -30 V K-1 at 10 K, followed by a sign change at 45 K. The Hall coefficient shows a maximum at ~ T ρmax and is dominated by skew scattering. At 2 K, the ordinary Hall coefficient R0~ 9.65 10-10 m3 C-1 corresponds in a one-band model to a charge carrier density of 1.33 holes/formula unit. The effective mass of the carriers at low temperatures is estimated to be 55me.

Print publication: Issue 19 (17 May 2006)
Received 16 December 2005, in final form 7 March 2006
Published 27 April 2006

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