S. Gall, J. Schneider, J. Klein, K. Hübener, M. Muske, B. Rau, E. Conrad, I. Sieber, K. Petter, K. Lips, M. Stöger-Pollach, P. Schattschneider, W. Fuhs:
"Large-grained polycrystalline silicon on glass for thin-film solar cells";
Thin Solid Films, 511-512 (2006), S. 7 - 14.

Kurzfassung englisch:
Large-grained polycrystalline silicon on glass for thin-film solar cells

S. Gall a, J. Schneider a, J. Klein a, K. Hübener a, 1, M. Muske a, B. Rau a, E. Conrad a, I. Sieber a, K. Petter a, K. Lips a, M. Stöger-Pollach b, P. Schattschneider b and W. Fuhs a

a Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
b Technische Universität Wien, Wiedner Hauptstr. 8, A-1040 Wien, Austria

Available online 23 January 2006.


We have investigated the formation of large-grained polycrystalline silicon (poly-Si) films on glass for thin-film solar cells using the `seed layer concept´ which is based on the epitaxial thickening of a thin large-grained poly-Si template (seed layer). Due to the glass substrate all process steps are limited to a temperature of about 600°C. The aluminium-induced layer exchange (ALILE) process based on the aluminium-induced crystallisation (AIC) of amorphous Si has been used to prepare p+-type seed layers featuring large grains and a high preferential (100) orientation of the surface. The seed layers have been thickened by electron cyclotron resonance chemical vapour deposition (ECRCVD) to form the p-type absorber of the solar cell. First poly-Si thin-film solar cell structures have been prepared by deposition of an n+-type a-Si : H emitter. So far an open circuit voltage of 284 mV has been reached without any additional treatments like defect annealing and defect passivation.

Keywords: Aluminium; Chemical vapor deposition (CVD); Crystallization; Epitaxy


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