Zeitschriftenartikel:
S.T. Nakagawa, M. Iwatani, G. Betz:
"A Coalescence Mechanism of Impurity Atoms Implanted into a Crystalline Target at Low Temperatures";
Journal of the Physical Society of Japan,
75
(2006),
S. 0246021
- 0246025.
Kurzfassung englisch:
We have studied the coalescence mechanism of impurity atoms implanted into a crystalline target at
low temperatures, paying attention to the dimer formation mechanism. A classical molecular-dynamics
(MD) calculations was used in the case of 1 keV B ion implantation at 100K into a crystalline silicon
(c-Si) target that was supersaturated with pre-embedded B atoms at a concentration of 3 at. %. The initial
phase of dimer formation was investigated in terms of the temperature distribution and the degradation of
the long-range order (LRO) parameters defined in the pixel mapping (PM) method. One result was the
locally high temperature and big temperature gradient that revealed the acceleration of collisional
diffusion of light impurity atoms in the host medium. The other finding was the decrease of the LRO
parameters. This fact associated with the number of self-interstitial atoms (SIAs) implies a deformed
potential-field in a crystal under ion irradiation. These results indicate that dynamically enhanced
diffusion or collisional-diffusion is the origin of dimer formation.
KEYWORDS: molecular dynamics, B cluster, nanoparticle formation, silicon, collisional diffusion
DOI: 10.1143/JPSJ.75.024602
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