[Zurück]

V.H. Tran, S. Paschen, F. Steglich, R. Troc, Z. Bukowski:
"Hall effect in the low charge-carrier density ferromagnet UCo_0.5Sb₂";
Phys. Stat. Sol., B 243 (2006), S. 94 - 97.

Hall effect in the low charge-carrier density ferromagnet UCo_0.5Sb₂

V. H. Tran 1 *, S. Paschen 2, F. Steglich 2, R. Tro 1, Z. Bukowski 1

1 W. Trzebiatowski Institute for Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocaw, Poland
2 Max-Planck Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany

Abstract
The Hall coefficient R_H of ferromagnetic UCo_0.5Sb₂ (T_C = 64.5 K) has been measured on a single crystal in the temperature range 2-300 K and in magnetic fields up to 7 T. The values of the normal R₀ and anomalous R_s coefficients were estimated by comparing R_H(B) with magnetisation M(B) data. The charge carrier concentration is found to decrease rapidly when the system undergoes a transition to the ferromagnetic ordered state. The charge mobility appears to fall down by as much as two orders of magnitude for temperatures from 20 K to 2 K. We ascribe this behaviour to an enormous decrease of the carrier collision time. The temperature dependencies of the Hall mean free path and mobility can be consistently interpreted within the 2D-weak localization feature.

http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC06588178

http://dx.doi.org/10.1002/pssb.200562495