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Zeitschriftenartikel:

G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
"Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results";
Nuclear Instruments & Methods in Physics Research Section B, 255 (2007), 1; S. 105 - 109.



Kurzfassung englisch:
Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results

G. Otto a,b, G. Hobler a, L. Palmetshofer c and P. Pongratz d

a Institut für Festkörperelektronik, Vienna University of Technology, A-1040 Vienna, Austria
b Secon Semiconductor Equipment GmbH, A- 2353 Guntramsdorf, Austria
c Institut für Halbleiter-und Festkörperphysik, Johannes Kepler University Linz, A-4040 Linz, Austria
d Institut für Festkörperphysik, Vienna University of Technology, A-1040 Vienna, Austria

Abstract

The size of collision cascades of heavy ions in silicon as calculated by molecular dynamics or other simulation methods is considerably larger than the size of the amorphous pockets observed by transmission electron microscopy (TEM). Using multislice TEM image contrast simulations with atom coordinates from molecular dynamics simulations, we show that the peripheries of the collision cascades should be visible in the TEM if they existed at the time of analysis. We argue that the most likely reason for the discrepancy is thermal annealing. In order to guarantee exactly the same TEM conditions in the simulation and the experiment, we have performed low-dose Ge, Te, and Pb implantations at cryogenic and room temperature, and use them in the comparison.

Schlagworte:
Ion implantation; Radiation damage; Amorphous pocket; Molecular dynamics simulation; Transmission electron microscopy; Multislice image calculation; TEM


Elektronische Version der Publikation:
http://dx.doi.org/10.1016/j.nimb.2006.11.020


Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.