Publications in Scientific Journals:
M. Stöger-Pollach, P. Schattschneider:
"The influence of relativistic energy losses on bandgap determination using valence EELS";
Ultramicroscopy,
107
(2007),
1178
- 1185.
English abstract:
The influence of relativistic energy losses on bandgap determination using valence EELS
M. Stöger-Pollach a and P. Schattschneider a
a University Service Center for Transmission Electron Microscopy, Technische Universität Wien, Wiedner Hauptstraße 8-10, A-1040 Wien, Austria
Abstract
Since monochromated transmission electron microscopes have become available, the determination of bandgaps and optical properties using electron energy loss spectrometry (EELS) has again attracted interest. The underlying idea is very simple: below the bandgap energy no transitions can contribute to the valence EELS signal. However, the bandgap cannot be directly read out from the recorded data. Therefore the optical properties cannot be determined correctly from the low loss using the Kramers-Kronig relations. We will discuss under which conditions relativistic effects may be surpressed. It is demonstrated that scanning TEM (STEM) geometry is not applicable for most bandgap measurements.
Keywords:
EELS; Bandgap; Kramers-Kronig; Semiconductors
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.ultramic.2007.01.015
Electronic version of the publication:
http://dx.doi.org/10.1016/j.ultramic.2007.01.015
Created from the Publication Database of the Vienna University of Technology.