[Zurück]

C.J. Powell, W.S.M. Werner, W. Smekal:
"Distinguishability of N Composition Profiles In SiON Films On Si By Angle-Resolved X-ray Photoelectron Spectroscopy";
in: "Proceedings of the NIST Nanoelectonics Conference 2007, CP931, Frontiers of Characterization and Metrology for Nanoelectronics", NIST Nanoelectonics Conference 2007, 2007, S. 303 - 307.

We report on the use of the NIST Database for the Simulation of Electron Spectra for Surface Analysis(SESSA) to determine N Is, O Is, and Si 2p3/2 photoelectron intensities for a 25 A SiON film on a Si substrate withdifferent distributions of N in the film. These simulations were made to assess the distinguishability of angle-resolved xrayphotoelectron spectroscopy (ARXPS) signals for each N distribution. Our approach differs from conventionalsimulations of ARXPS data in that we do not neglect elastic scattering of the photoelectrons and the finite solid angle ofthe analyzer. Appreciable dispersion of the photoelectron intensities was found only for the N Is intensities at anemission angle of 750 (with respect to the surface normal). Conventional analyses of ARXPS data that include such largeemission angles are unlikely to be valid due to angle-dependent changes of the attenuation length. We demonstrate themagnitude of elastic-scattering and analyzer solid-angle effects on the calculated angular distributions.

Gate oxides, silicon, silicon oxynitride, simulation, surface analysis. X-ray photoelectron spectroscopy