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F. Aumayr:
"Highly charged ion-induced nanostructures on surfaces";
Vortrag: 4th Conference on Elementary Processes in Atomic Systems (CEPAS), Cluj-Napoca/Romania (eingeladen); 19.06.2008; in: "Book of Abstract, 4th Conference on Elementary Processes in Atomic Systems", (2008), S. 41.

Controlled modifications of surface and bulk properties of materials by irradiation
with ion beams is a widely used technique in applied fields like micro-electronics,
biotechnology or photonics. In these applications high ion-fluences are used and the kinetic
energy of the ions is controlled to induce the desired surface modification. With decreasing
dimensions of devices, new experimental tools have to be developed. Recent work in this
area has concentrated on substituting individual slow highly charged ions (HCI) for singly
charged ion beams. Single HCI-impact induced surface modifications with only nanometer
dimensions have recently been demonstrated [1-8]. During their recombination at a surface,
slow HCI deposit a large amount of potential energy into a small and shallow surface region
[9], which can lead to nano-sized surface defects. For example the formation of SiO2 nano-
dots on a hydrogen passivated silicon surface [6] and the creation of nano-diamonds on
HOPG [5] due to the impact of individual slow HCI were reported.