Talks and Poster Presentations (with Proceedings-Entry):
W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser:
"Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Hakone, Japan;
2008-09-09
- 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2008),
ISBN: 978-1-4244-1753-7;
69
- 72.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2008.4648239
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2009/CP2008_Goes_1.pdf
Created from the Publication Database of the Vienna University of Technology.