S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study";
Solid-State Electronics, 52 (2008), 11; S. 1791 - 1795.
http://dx.doi.org/10.1016/j.sse.2008.07.011Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2008/JB2008_Vitanov_1.pdf