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P. Lazar, B. Rashkova, J. Redinger, R. Podloucky, C. Mitterer, C. Scheu, G. Dehm:
"Interface structure of epitaxial (111) VN films on (111) MgO substrates";
Thin Solid Films, 517 (2008), 1177 - 1181.

Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2-3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface.\