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Zeitschriftenartikel:

H. Steiner, C. Eisenmenger-Sittner, B. Schwarz:
"Temperature induced recrystallization of copper coatings deposited on adhesion promoting molybdenum interlayers";
Journal of Physics: Conference Series, 100 (2008), S. 082032.



Kurzfassung englisch:
Molybdenum layers act as wetting and adhesion promoters of Copper to Carbon. To trigger the adhesion promoting property of Mo a temperature treatment of at least 600°C under High Vacuum (HV) conditions is necessary. This step transforms Mo to a Mo-carbide. It is the intention of this paper to investigate the effects of heat treatment below and above the carbidzation temperature on Cu films located on top of a Mo interlayer. Cu films of 1 μm thickness were deposited on 100 nm thick Mo layers. Both films were deposited at room temperature (RT) by magnetron sputtering using Ar as working gas. Vitreous Carbon (Sigradur G) served as substrate. The samples were subjected to a temperature treatment at 200°C, 400°C and 800°C under HV for 1 to 15 minutes. Morphological changes of the Cu surface were followed by Atomic Force Microscopy (AFM). The as deposited Cu coatings exhibit features with an average diameter of approx. 50 nm. Prolonged temperature treatment at 200°C showed no significant effect on the Cu surface morphology. Significant recrystallization occurred at 400 and 800°C. Grains with a mean diameter of 5 - 10 μm were formed. Temperature treatment at 400°C yields two dimensional flat crystallites while three dimensional grains form at 800°C. Adhesion tests and a chemical analysis of the Mo-interlayer by Auger Electron Spectroscopy (AES) showed that the formation of Mo-carbide is indeed necessary for adhesion improvement, while the observed recrystallization only has a minor effect on the adhesive properties of the Cu coating.


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/1742-6596/100/8/082032

Elektronische Version der Publikation:
http://dx.doi.org/10.1088/1742-6596/100/8/082032


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.