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U. Schmid, S.T. Sheppard, W. Wondrak, E. Niemann:
"Electrical characterization of 6H-SiC enhancement-mode MOSFETs at high temperatures";
Materials Science and Engineering B, Vol. 61-62 (1999), 493 - 496.

Linear, small-signal enhancement-mode MOSFETs are fabricated in p-type 6H-SiC. Ion implantation of nitrogen and aluminum are used to form the n+-regions for the source/drain contacts and the channel-stop, respectively. Direct current measurements were performed up to 673 K, revealing a drain-to-source saturation current IDSS of 1.53 mA mm−1 at VDS=+10 V and VGS=+9 V, a transconductance in saturation of 0.56 mS mm−1 at VGS=+9 V and a subthreshold slope of 170 mV per decade at room temperature. The excellent high temperature behavior is demonstrated by an ION/IOff ratio of 105 at 673 K (108 at 303 K) and low leakage currents (<10 pA) below threshold up to 523 K. The inversion layer mobility of the electrons μn is 40 cm2 V−1 s−1 at room temperature, having a thermally activated region up to 423 K with maximum of 44 cm2 V−1 s−1 before decreasing by phonon scattering.

http://dx.doi.org/10.1016/S0921-5107(98)00460-7