C. Chainais-Hillairet, M. Gisclon, A. Jüngel:

"A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors";

in: "ASC Report 16/2009", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2009, ISBN: 978-3-902627-02-5.

A nite-volume scheme for the stationary unipolar quantum drift-di usion equations

for semiconductors in several space dimensions is analyzed. The model consists of a

fourth-order elliptic equation for the electron density, coupled to the Poisson equation for

the electrostatic potential, with mixed Dirichlet-Neumann boundary conditions. The numerical

scheme is based on a Scharfetter-Gummel type reformulation of the equations. The

existence of a sequence of solutions to the discrete problem and its numerical convergence to

a solution to the continuous model are shown. Moreover, some numerical examples in two

space dimensions are presented.

Quantum Bohm potential, density-gradient model, nite-volume method, discrete Sobolev

http://www.asc.tuwien.ac.at/preprint/2009/asc16x2009.pdf

Created from the Publication Database of the Vienna University of Technology.