Contributions to Books:

A. Jüngel:
"Energy transport in semiconductor devices";
in: "ASC Report 42/2009", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2009, ISBN: 978-3-902627-02-5.

English abstract:
The modeling, analysis, and numerical approximation of energy-transport
models for semiconductor devices is reviewed. The derivation of the partial differential
equations from the semiconductor Boltzmann equation is sketched. Furthermore,
the main ideas for the analytical treatment of the equations, employing thermodynamic
principles, are given. A new result is the proof of the weak sequential stability of approximate
solutions to some time-dependent energy-transport equations with physical
transport coefficients. The discretization of the stationary model using mixed finite elements
is explained, and some numerical results in two and three space dimensions are
presented. Finally, energy-transport models with lattice heating or quantum corrections
are discussed.

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.