A. Jüngel:

"Energy transport in semiconductor devices";

in: "ASC Report 42/2009", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2009, ISBN: 978-3-902627-02-5.

The modeling, analysis, and numerical approximation of energy-transport

models for semiconductor devices is reviewed. The derivation of the partial differential

equations from the semiconductor Boltzmann equation is sketched. Furthermore,

the main ideas for the analytical treatment of the equations, employing thermodynamic

principles, are given. A new result is the proof of the weak sequential stability of approximate

solutions to some time-dependent energy-transport equations with physical

transport coefficients. The discretization of the stationary model using mixed finite elements

is explained, and some numerical results in two and three space dimensions are

presented. Finally, energy-transport models with lattice heating or quantum corrections

are discussed.

http://www.asc.tuwien.ac.at/preprint/2009/asc42x2009.pdf

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