[Back]


Talks and Poster Presentations (with Proceedings-Entry):

S. Klein, S Thilmont, V. Ziegler, U. Prechtel, U. Schmid, H. Seidel:
"High Temperature Stable Rf Mems Switch Based On Tungsten-Titanium";
Talk: 15th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 09), Denver, CO, USA; 06-21-2009 - 06-25-2009; in: "Proceedings of the 15th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 09)", IEEE, (2009), ISBN: 978-1-4244-4193-8; 1409 - 1412.



English abstract:
In this paper we present a high temperature stable, capacitive
RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500°C. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-stateisolation with a moderate pull-in voltage and with high
restoring forces. Measurements of the high frequency performance
in the 20 to 36 GHz range provided good results for insertion loss and isolation.

Keywords:
RF MEMS, microswitch, stress, cantilever, electrostatic actuation, temperature stability

Created from the Publication Database of the Vienna University of Technology.