A. Jüngel:

"Energy transport in semiconductor devices";

Mathematical and Computer Modelling of Dynamical Systems,16(2010), 1; S. 1 - 22.

Siehe englischen Abstract.

The modelling, analysis and numerical approximation of energy-transport models for

semiconductor devices are reviewed. The derivation of the partial differential equations

from the semiconductor Boltzmann equation is sketched. Furthermore, the main ideas for

the analytical treatment of the equations, employing thermodynamic principles, are given.

A new result is the proof of the weak sequential stability of approximate solutions to some

time-dependent energy-transport equations with physical transport coefficients. The

discretization of the stationary model using mixed finite elements is explained, and some

numerical results in two and three space dimensions are presented. Finally, energytransport

models with lattice heating or quantum corrections are reviewed.

energy-transport equations; semiconductors; existence analysis

Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.