Publications in Scientific Journals:
B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
IEEE Electron Device Letters,
31
(2010),
5;
411
- 413.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/LED.2010.2044014
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2010/JB2010_Grasser_2.pdf
Created from the Publication Database of the Vienna University of Technology.