Contributions to Books:

A. Jüngel, R. Pinnau, E. Röhrig:
"Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode";
in: "ASC Report 15/2010", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2.

English abstract:
A simplified bipolar energy-transport model for a metal-oxide-semiconductor
diode (MOS) with nonconstant lattice temperature is considered. The particle current densities
vanish in the diode but the particle temperatures may be large. The existence of weak
solutions to the system of quasilinear elliptic equations with nonlinear boundary conditions
is proved using a Stampacchia trunction technique and maximum principle arguments. Further,
an asymptotic analysis for the one-dimensional MOS diode is presented, which shows
that only the boundary temperature influences the capacitance-voltage characteristics of the
device. The analytical results are underlined by numerical experiments

MOS diode, enrgy-tranport model

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.