A. Jüngel, R. Pinnau, E. Röhrig:

"Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode";

in: "ASC Report 15/2010", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2.

A simplified bipolar energy-transport model for a metal-oxide-semiconductor

diode (MOS) with nonconstant lattice temperature is considered. The particle current densities

vanish in the diode but the particle temperatures may be large. The existence of weak

solutions to the system of quasilinear elliptic equations with nonlinear boundary conditions

is proved using a Stampacchia trunction technique and maximum principle arguments. Further,

an asymptotic analysis for the one-dimensional MOS diode is presented, which shows

that only the boundary temperature influences the capacitance-voltage characteristics of the

device. The analytical results are underlined by numerical experiments

MOS diode, enrgy-tranport model

http://www.asc.tuwien.ac.at/preprint/2010/asc15x2010.pdf

Created from the Publication Database of the Vienna University of Technology.