Publications in Scientific Journals:

D. Ingerle, F. Meirer, N. Zöger, G. Pepponi, D. Giubertoni, G. Steinhauser, P. Wobrauschek, C. Streli:
"A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers";
Spectrochimica Acta Part B, 65 (2010), 429 - 433.

English abstract:
Grazing Incidence X-ray Fluorescence Analysis (GIXRF) is a powerful technique for depth-profiling and
characterization of thin layers in depths up to a few hundred nanometers. By measurement of fluorescence
signals at various incidence angles Grazing Incidence X-ray Fluorescence Analysis provides information on
depth distribution and total dose of the elements in the layers. The technique is very sensitive even in depths
of a few nanometers. As Grazing Incidence X-ray Fluorescence Analysis does not provide unambigous depth
profile information and needs a realistic input depth profile for fitting, in the context of the EC funded
European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA)
Grazing Incidence X-ray Fluorescence Analysis is used as a complementary technique to Secondary Ion Mass
Spectrometry (SIMS) for the characterization of Ultra Shallow Junctions (USJ).
A measuring chamber was designed, constructed and tested to meet the requirements of Grazing Incidence
X-ray Fluorescence Analysis. A measurement protocol was developed and tested. Some results for As
implants as well as Hf based high k layers on Silicon are shown. For the determination of the bulk As content
of the wafers, Instrumental Neutron Activation Analysis has also been applied for comparison.

GIXRF, Depth profiling, Thin layer characterization, Silicon wafer surface analysis

"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.