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Publications in Scientific Journals:

D. Ingerle, F. Meirer, N. Zöger, G. Pepponi, D. Giubertoni, G. Steinhauser, P. Wobrauschek, C. Streli:
"A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers";
Spectrochimica Acta Part B, 65 (2010), 429 - 433.



English abstract:
Grazing Incidence X-ray Fluorescence Analysis (GIXRF) is a powerful technique for depth-profiling and
characterization of thin layers in depths up to a few hundred nanometers. By measurement of fluorescence
signals at various incidence angles Grazing Incidence X-ray Fluorescence Analysis provides information on
depth distribution and total dose of the elements in the layers. The technique is very sensitive even in depths
of a few nanometers. As Grazing Incidence X-ray Fluorescence Analysis does not provide unambigous depth
profile information and needs a realistic input depth profile for fitting, in the context of the EC funded
European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA)
Grazing Incidence X-ray Fluorescence Analysis is used as a complementary technique to Secondary Ion Mass
Spectrometry (SIMS) for the characterization of Ultra Shallow Junctions (USJ).
A measuring chamber was designed, constructed and tested to meet the requirements of Grazing Incidence
X-ray Fluorescence Analysis. A measurement protocol was developed and tested. Some results for As
implants as well as Hf based high k layers on Silicon are shown. For the determination of the bulk As content
of the wafers, Instrumental Neutron Activation Analysis has also been applied for comparison.

Keywords:
GIXRF, Depth profiling, Thin layer characterization, Silicon wafer surface analysis


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.sab.2010.02.015

Electronic version of the publication:
http://publik.tuwien.ac.at/files/PubDat_187420.pdf


Created from the Publication Database of the Vienna University of Technology.