Zeitschriftenartikel:
G. Parkinson, N. Mulakaluri, Y. Losovyj, P. Jacobson, R. Pentcheva, U. Diebold:
"Semiconductor-half metal transition at the Fe3O4(001) surface upon hydrogen adsorption";
Physical Review B,
82
(2010),
S. 1254131
- 1254135.
Kurzfassung englisch:
The adsorption of H on the magnetite 001 surface was studied with photoemission spectroscopies, scanning tunneling microscopy, and density-functional theory. At saturation coverage the insulating 22R45° reconstruction is lifted and the surface undergoes a semiconductor-half metal transition. This transition involves subtle changes in the local geometric structure linked to an enrichment of Fe2+ cations at the surface. The ability to manipulate the electronic properties by surface engineering has important implications for magnetite-based spintronic devices.
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.