Talks and Poster Presentations (with Proceedings-Entry):
J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken:
"6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT";
Talk: IEEE International Electron Devices Meeting (IEDM),
San Francisco, CA, USA;
2010-12-06
- 2010-12-08; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2010),
70
- 73.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM.2010.5703292
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2010/FRANCO10B.pdf
Created from the Publication Database of the Vienna University of Technology.