[Zurück]

M. Brunk, A. Jüngel:
"Self-heating in a coupled thermo-electric circuit-device model";
Journal of Computational Electronics, 10 (2011), S. 163 - 178.

Siehe englisches Abstract.

The self-heating of a coupled thermo-electric
circuit-semiconductor system is modeled and numerically
simulated. The system consists of semiconductor devices,
an electric network with resistors, capacitors, inductors, and
voltage sources, and a thermal network. The flow of the
charge carriers is described by the energy-transport equations
coupled to a heat equation for the lattice temperature.
The electric circuit is modeled by the network equations
from modified nodal analysis coupled to a thermal network
describing the evolution of the temperatures in the lumped
and distributed circuit elements. The three subsystems are
coupled through thermo-electric, electric circuit-device, and
thermal network-device interface conditions. The resulting
system of nonlinear partial differential-algebraic equations
is discretized in time by the 2-stage backward difference
formula and in space by a mixed finite-element method.
Numerical simulations of a one-dimensional ballistic diode
and a frequency multiplier circuit containing a pn-junction
diode illustrate the heating of the semiconductor device and
circuit resistors.

Energy transport; thermal network; mixed finite elements

http://dx.doi.org/10.1007/s10825-010-0324-9