Publications in Scientific Journals:
M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken:
"Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress";
Applied Physics Letters,
98
(2011),
183506-1
- 183506-3.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1063/1.3586780
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2010/JB2011_Grasser_1.pdf
Created from the Publication Database of the Vienna University of Technology.